Improving the on-resistance of FETs for power applications
Isemann H, Fischer I, Hahnel D, Oehme M, Schulze J (2012)
Publication Type: Conference contribution
Publication year: 2012
Pages Range: 174-175
Conference Proceedings Title: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Event location: USA
ISBN: 9781457718625
DOI: 10.1109/ISTDM.2012.6222516
Abstract
With emerging issues such as e-mobility and sustainable energy supply, semiconductor power devices again are coming into the focus of academic and industrial research. Low power consumption of these devices requires low on-resistances (RON). With the goal of applying these improvements finally to an IGBT structure, we focus on the optimization of two contributing factors to the RON: the resistance of the channel and of the substrate. One possibility to reduce the channel resistance is to constrict the doping in the channel region to only a few nanometers. Such a PDBFET (planar doped barrier field effect transistor) structure leads to a higher electron mobility. The On/Off current ratio achieved is more than 9 orders of magnitude. This concept can be transferred to a power device and is also explored. A second option to reduce the RON is the usage of a thinner substrate. A TMAH etch process was developed to etch membranes of 90 m thickness. Using the membrane as the drift zone, p-i-n diodes are fabricated by means of molecular beam epitaxy (MBE). With this, we have explored two different techniques for the reduction of RON in the fabrication of separate devices. Our next step is to integrate these technologies into the fabrication of an IGBT. © 2012 IEEE.
Involved external institutions
Germany (DE)How to cite
APA:
Isemann, H., Fischer, I., Hahnel, D., Oehme, M., & Schulze, J. (2012). Improving the on-resistance of FETs for power applications. In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (pp. 174-175). USA.
MLA:
Isemann, H., et al. "Improving the on-resistance of FETs for power applications." Proceedings of the 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, USA 2012. 174-175.
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