Tuning the germanium TFET: Device optimization for maximum ion
Hähnel D, Fischer I, Isemann H, Oehme M, Schulze J (2012)
Publication Type: Conference contribution
Publication year: 2012
Pages Range: 112-113
Conference Proceedings Title: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Event location: USA
ISBN: 9781457718625
DOI: 10.1109/ISTDM.2012.6222483
Abstract
As MOSFET scaling has attained the 22 nm node, alternative concepts are intensively being investigated. The concept of the Tunneling Field Effect Transistor (TFET) is currently being explored as one of the device concepts most likely to enable energy efficient computation that, in addition, can potentially outperform the conventional MOSFET. We present a vertical device architecture grown with a solid source SiGe Molecular Beam Epitaxy (MBE) technique. The layer structure consists of a p+-i-n+ heterostructure. Layer growth by MBE enables us to realize abrupt heterojunctions and sharp doping profiles, which are key requirements for high TFET performance. For the Ge vTFET we used a special low temperature processing. With the improved growth of the TFET structure, we can achieve a high record Ion of 822 A/m at p-channel operation. This represents a considerable improvement over previous Ge (v)TFET devices. The Ion/Ioff ratio approaches three decades in p-channel mode. © 2012 IEEE.
Involved external institutions
Germany (DE)How to cite
APA:
Hähnel, D., Fischer, I., Isemann, H., Oehme, M., & Schulze, J. (2012). Tuning the germanium TFET: Device optimization for maximum ion. In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (pp. 112-113). USA.
MLA:
Hähnel, D., et al. "Tuning the germanium TFET: Device optimization for maximum ion." Proceedings of the 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, USA 2012. 112-113.
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