CMOS-compatible plasmon propagation and detection in vertical Si and Ge p-i-n diodes
Fischer IA, Eßlinger M, Vogelgesang R, Wu JL, Schulze J (2012)
Publication Type: Conference contribution
Publication year: 2012
Pages Range: 184-185
Conference Proceedings Title: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Event location: USA
ISBN: 9781457718625
DOI: 10.1109/ISTDM.2012.6222415
Abstract
Metallic interconnects have been predicted to be the limiting factor in increasing overall device performance in the near future. Photonic interconnects as a potential alternative are subject to the diffraction limit which limits their use to interconnects with dimensions larger than /2, with being the wavelength of light. Optical interconnects that are based on plasmonic transmission lines could provide interconnect functionality far into the nanometer regime. For this, efficient electrical excitation and detection of surface plasmon polaritons (SPPs) using CMOS-compatible technology is a prerequisite. We report on the fabrication of plasmon coupling structures and slot waveguides in the Aluminum metallization of Ge p-i-n diodes that are used to optically excite SPPs and guide them towards the diode mesa where they can be detected electrically. First results of photocurrent maps of the finished devices under laser illumination at different wavelengths are shown. © 2012 IEEE.
Involved external institutions
Germany (DE)How to cite
APA:
Fischer, I.A., Eßlinger, M., Vogelgesang, R., Wu, J.L., & Schulze, J. (2012). CMOS-compatible plasmon propagation and detection in vertical Si and Ge p-i-n diodes. In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (pp. 184-185). USA.
MLA:
Fischer, I. A., et al. "CMOS-compatible plasmon propagation and detection in vertical Si and Ge p-i-n diodes." Proceedings of the 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, USA 2012. 184-185.
BibTeX: Download