GeSn p-i-n detectors integrated on Si with up to 4% Sn

Oehme M, Schmid M, Kaschel M, Gollhofer M, Widmann D, Kasper E, Schulze J (2012)

Publication Type: Journal article

Publication year: 2012

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 101

Article Number: 141110

Journal Issue: 14

DOI: 10.1063/1.4757124

Abstract

GeSn heterojunction photodetectors on Si substrates were grown with Sn concentration up to 4%, fabricated for vertical light incidence, and characterized. The complete layer structure was grown by means of ultra low temperature (100 °C) molecular beam epitaxy. The Sn content shifts the responsivity into the infrared, about 310 nm for the 4% Sn sample. An increase of the optical responsivity for wavelengths higher than 1550 nm can be observed with increasing Sn content. At 1600 nm, the optical responsivity is increased by more than a factor of 10 for the GeSn diode with 4 Sn in comparison to the Ge reference diode. © 2012 American Institute of Physics.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Oehme, M., Schmid, M., Kaschel, M., Gollhofer, M., Widmann, D., Kasper, E., & Schulze, J. (2012). GeSn p-i-n detectors integrated on Si with up to 4% Sn. Applied Physics Letters, 101(14). https://dx.doi.org/10.1063/1.4757124

MLA:

Oehme, Michael, et al. "GeSn p-i-n detectors integrated on Si with up to 4% Sn." Applied Physics Letters 101.14 (2012).

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