Electroluminescence of unstrained and tensile strained Ge-on-Si LEDs
Schmid M, Oehme M, Gollhofer M, Kasche M, Kasper E, Schulze J (2012)
Publication Type: Conference contribution
Publication year: 2012
Pages Range: 135-137
Conference Proceedings Title: IEEE International Conference on Group IV Photonics GFP
Event location: USA
ISBN: 9781457708268
DOI: 10.1109/GROUP4.2012.6324111
Abstract
The strain of MBE grown Ge-on-Si p-i-n diodes is engineered between zero and 0.24% tensile strain. From electroluminescence peak positions the direct bandgap energies are determined to vary between 0.801 eV and 0.782 eV respectively. © 2012 IEEE.
Involved external institutions
Germany (DE)How to cite
APA:
Schmid, M., Oehme, M., Gollhofer, M., Kasche, M., Kasper, E., & Schulze, J. (2012). Electroluminescence of unstrained and tensile strained Ge-on-Si LEDs. In IEEE International Conference on Group IV Photonics GFP (pp. 135-137). USA.
MLA:
Schmid, M., et al. "Electroluminescence of unstrained and tensile strained Ge-on-Si LEDs." Proceedings of the 2012 IEEE 9th International Conference on Group IV Photonics, GFP 2012, USA 2012. 135-137.
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