GeSn photodetection and electroluminescence devices on Si
Oehme M, Kasper E, Schulze J (2012)
Publication Type: Conference contribution
Publication year: 2012
Journal
Book Volume: 50
Pages Range: 583-590
Conference Proceedings Title: ECS Transactions
Event location: USA
ISBN: 9781607683575
Abstract
GeSn heterojunction photonic devices with Sn concentration up to 4 % were fabricated. The complete layer structure is grown by means of ultra low temperature MBE with special Ge/Si heterocontacts. The Sn incorporation in Ge is facilitated by a very low temperature growth step in order to suppress Sn surface segregation. For vertical photodetectors an increase of the optical responsivity for higher wavelengths can be observed with increasing Sn content. At the wavelength of 1600 nm the optical responsivity is increased by more than a factor of 10 for the GeSn p-i-n diode with 4 % Sn in comparison to the Ge reference diode. Clear direct bandgap electroluminescence emission at room temperature is demonstrated for LED's with this new material. © The Electrochemical Society.
Involved external institutions
Germany (DE)How to cite
APA:
Oehme, M., Kasper, E., & Schulze, J. (2012). GeSn photodetection and electroluminescence devices on Si. In ECS Transactions (pp. 583-590). USA.
MLA:
Oehme, M., E. Kasper, and J. Schulze. "GeSn photodetection and electroluminescence devices on Si." Proceedings of the 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, USA 2012. 583-590.
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