Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates
Kaschel M, Schmid M, Gollhofer M, Werner J, Oehme M, Schulze J (2013)
Publication Type: Journal article
Publication year: 2013
Journal
Book Volume: 83
Pages Range: 87-91
DOI: 10.1016/j.sse.2013.01.041
Abstract
In this work, electroluminescence from the intrinsic Germanium layer of tensile strained Germanium LEDs is observed at room temperature. The pin LEDs are fabricated by low temperature molecular beam epitaxy with a double-heterojunction process on Silicon substrates. The tensile strain is adjusted at 0.24% with an annealing step at 700°C leading to a lowering of the direct band gap. Electroluminescence spectra show a value of 0.781 eV for the direct band gap or an infrared shift of 19 meV. Increasing of the intrinsic layer thickness leads to higher electroluminescence intensity. © 2013 Elsevier Ltd. All rights reserved.
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Germany (DE)How to cite
APA:
Kaschel, M., Schmid, M., Gollhofer, M., Werner, J., Oehme, M., & Schulze, J. (2013). Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates. Solid-State Electronics, 83, 87-91. https://doi.org/10.1016/j.sse.2013.01.041
MLA:
Kaschel, Mathias, et al. "Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates." Solid-State Electronics 83 (2013): 87-91.
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