Mn5Ge3C0.8 contacts for spin injection into Ge

Fischer IA, Suergers C, Petit M, Le Thanh V, Schulze J (2013)

Publication Type: Conference contribution

Publication year: 2013

Journal

ECS Transactions Electrochemical Society

Publisher: Electrochemical Society Inc.

Book Volume: 58

Pages Range: 29-36

Conference Proceedings Title: ECS Transactions

DOI: 10.1149/05809.0029ecst

Abstract

We investigate the properties of Mn5Ge3C 0.8 contacts on Ge (100) and (111) with varying doping type and doping concentrations with the aim of fabricating low-resistance contacts. Specific contact resistivities on Ge (100) are very high in all cases. The lowest specific contact resistivity (1.25 · 10^-4 Ω ·cm²) was obtained for Mn5Ge3C 0.8 contacts on n⁺⁺-Ge (111) with ND = 1·10²⁰ cm^-3. We discuss means to further reduce specific contact resistivities. © The Electrochemical Society.

Involved external institutions

Universität Stuttgart

Germany (DE) Karlsruhe Institute of Technology (KIT)

Germany (DE) Aix-Marseille University / Aix-Marseille Université

France (FR)

How to cite

APA:

Fischer, I.A., Suergers, C., Petit, M., Le Thanh, V., & Schulze, J. (2013). Mn5Ge3C0.8 contacts for spin injection into Ge. In ECS Transactions (pp. 29-36). Electrochemical Society Inc..

MLA:

Fischer, I. A., et al. "Mn5Ge3C0.8 contacts for spin injection into Ge." Proceedings of the ECS Transactions Electrochemical Society Inc., 2013. 29-36.

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