Resistance-capacitance limitation of fast double heterojunction Ge p-i-n photodetectors
Kaschel M, Schmid M, Gollhofer M, Oehme M, Kasper E, Schulze J (2013)
Publication Type: Conference contribution
Publication year: 2013
Journal
Book Volume: 8767
Conference Proceedings Title: Proceedings of SPIE - The International Society for Optical Engineering
Event location: USA
ISBN: 9780819495648
DOI: 10.1117/12.2017008
Abstract
This work presents the limiting factors of fast Germanium p-i-n photodetectors for optical on-chip communication. The photodetectors are grown by molecular beam epitaxy on Silicon and Silicon on insulator substrates. On-wafer RF and optical RF measurements up to 40 GHz are performed at a wavelength of 1.55 μm. Different de-embedding procedures are used to obtain the amplitude and phase of the device impedance and the equivalent circuit description. An analysis of the reflection coefficient compared to the equivalent circuit explains the frequency characteristic and it is used to determine background doping of the intrinsic layer and the expansion of the space charge width. The optical bandwidth is measured for different bias voltages and background doping. The RC limitation of the detectors is shown and analyzed leading to adjusted parameters for high speed detectors at zero-bas. © 2013 SPIE.
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Germany (DE)How to cite
APA:
Kaschel, M., Schmid, M., Gollhofer, M., Oehme, M., Kasper, E., & Schulze, J. (2013). Resistance-capacitance limitation of fast double heterojunction Ge p-i-n photodetectors. In Proceedings of SPIE - The International Society for Optical Engineering. USA.
MLA:
Kaschel, Mathias, et al. "Resistance-capacitance limitation of fast double heterojunction Ge p-i-n photodetectors." Proceedings of the Integrated Photonics: Materials, Devices, and Applications II, USA 2013.
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