GeSn heterojunction diode: Detector and emitter in one device
Oehme M, Kasper E, Schulze J (2013)
Publication Type: Journal article
Publication year: 2013
Journal
Book Volume: 2
Pages Range: R76-R78
Journal Issue: 4
DOI: 10.1149/2.002305jss
Abstract
GeSn heterojunction photonic devices with Sn concentration up to 4% were fabricated. The complete layer structure is grown by means of ultra low temperature MBE with special Ge/Si heterocontacts. The Sn incorporation in Ge is facilitated by a very low temperature growth step in order to suppress Sn surface segregation. For vertical photodetectors an increase of the optical responsivity for higher wavelengths can be observed with increasing Sn content. At the wavelength of 1600 nm the optical responsivity is increased by more than a factor of 10 for the GeSn p-i-n diode with 4% Sn in comparison to the Ge reference diode. Clear direct bandgap electroluminescence emission at room temperature is demonstrated for LED's with this new material. © 2013 The Electrochemical Society.
Involved external institutions
Germany (DE)How to cite
APA:
Oehme, M., Kasper, E., & Schulze, J. (2013). GeSn heterojunction diode: Detector and emitter in one device. ECS Journal of Solid State Science and Technology, 2(4), R76-R78. https://dx.doi.org/10.1149/2.002305jss
MLA:
Oehme, Michael, E. Kasper, and J. Schulze. "GeSn heterojunction diode: Detector and emitter in one device." ECS Journal of Solid State Science and Technology 2.4 (2013): R76-R78.
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