Ferromagnetic Mn5Ge3C0.8 contacts on Ge: Work function and specific contact resistivity

Fischer IA, Gebauer J, Rolseth E, Winkel P, Chang LT, Wang KL, Suergers C, Schulze J (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Semiconductor Science and Technology Institute of Physics: Hybrid Open Access

Book Volume: 28

Article Number: 125002

Journal Issue: 12

DOI: 10.1088/0268-1242/28/12/125002

Abstract

We report on the study of the electrical and magnetic properties of Mn 5Ge3C0.8 contacts deposited on highly doped n-Ge (1 0 0) as a potentially complementary metal-oxide-semiconductor (CMOS)-compatible material system for spin injection into Ge. Mn 5Ge3C0.8 is a ferromagnet with a Curie temperature of 445 K and with a resistivity that is comparable to highly doped Ge. We extract the work function of Mn5Ge3C0.8 from metal-oxide-semiconductor capacitance measurements and obtain a specific contact resistivity rC = 5.0 ω cm2 from transmission-line measurements. We discuss possible origins of the large specific contact resistivity of Mn5Ge3C0.8 on Ge. © 2013 IOP Publishing Ltd.

Involved external institutions

Universität Stuttgart DE Germany (DE) Karlsruhe Institute of Technology (KIT) DE Germany (DE) University of California Los Angeles (UCLA) US United States (USA) (US)

How to cite

APA:

Fischer, I.A., Gebauer, J., Rolseth, E., Winkel, P., Chang, L.-T., Wang, K.L.,... Schulze, J. (2013). Ferromagnetic Mn5Ge3C0.8 contacts on Ge: Work function and specific contact resistivity. Semiconductor Science and Technology, 28(12). https://dx.doi.org/10.1088/0268-1242/28/12/125002

MLA:

Fischer, I. A., et al. "Ferromagnetic Mn5Ge3C0.8 contacts on Ge: Work function and specific contact resistivity." Semiconductor Science and Technology 28.12 (2013).

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