GeSn/Ge multiquantum well photodetectors on Si substrates

Oehme M, Widmann D, Kostecki K, Zaumseil P, Schwartz B, Gollhofer M, Koerner R, Bechler S, Kittler M, Kasper E, Schulze J (2014)

Publication Type: Journal article

Publication year: 2014

Journal

Optics Letters Optical Society of America

Book Volume: 39

Pages Range: 4711-4714

Journal Issue: 16

DOI: 10.1364/OL.39.004711

Abstract

Vertical incidence GeSn/Ge multiquantum well (MQW) pin photodetectors on Si substrates were fabricated with a Sn concentration of 7%. The epitaxial structure was grown with a special low temperature molecular beam epitaxy process. The Ge barrier in the GeSn/GeMQWwas kept constant at 10 nm. The well width was varied between 6 and 12 nm. The GeSn/Ge MQW structures were grown pseudomorphically with the in-plane lattice constant of the Ge virtual substrate. The absorption edge shifts to longer wavelengths with thicker QWs in agreement with expectations from smaller quantization energies for the thicker QWs. © 2014 Optical Society of America.

Involved external institutions

Universität Stuttgart DE Germany (DE) Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics DE Germany (DE) Brandenburgische Technische Universität Cottbus-Senftenberg (BTU) DE Germany (DE)

How to cite

APA:

Oehme, M., Widmann, D., Kostecki, K., Zaumseil, P., Schwartz, B., Gollhofer, M.,... Schulze, J. (2014). GeSn/Ge multiquantum well photodetectors on Si substrates. Optics Letters, 39(16), 4711-4714. https://dx.doi.org/10.1364/OL.39.004711

MLA:

Oehme, Michael, et al. "GeSn/Ge multiquantum well photodetectors on Si substrates." Optics Letters 39.16 (2014): 4711-4714.

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