High performance sub-430°C epitaxial silicon PIN selector for 3D RRAM
Mandapati R, Shrivastava S, Das B, Sushama S, Ostwal V, Schulze J, Ganguly U (2014)
Publication Type: Conference contribution
Publication year: 2014
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 241-242
Conference Proceedings Title: Device Research Conference - Conference Digest, DRC
Event location: USA
ISBN: 9781479954056
Abstract
The high performance of Si based selection devices is constrained by the high processing temperature requirement (>700°C) for 3D storage memory application. Many high performance Si based selection devices have been demonstrated. Epitaxial [1] and poly PN junction diodes [2-3] have been demonstrated for unipolar RRAM while epitaxial NPN punch-through diodes [4] has been developed for bipolar RRAM as summarized in Table 1. However, Si based selection devices require high temperature (>700°C) epitaxy, CVD, or crystallization. The main challenges for low temperature process are (i) high dopant activation for on-current density (ii) low defects for low off-current. In this paper, we demonstrate that sub-430°C temperature Si diodes by Si MBE with excellent performance. 3D stacking by various strategies e.g. lateral epitaxial overgrowth on seed hole [5], is enabled by back-end compatible temperature of epitaxy. © 2014 IEEE.
Involved external institutions
India (IN)
Germany (DE)How to cite
APA:
Mandapati, R., Shrivastava, S., Das, B., Sushama, S., Ostwal, V., Schulze, J., & Ganguly, U. (2014). High performance sub-430°C epitaxial silicon PIN selector for 3D RRAM. In Device Research Conference - Conference Digest, DRC (pp. 241-242). USA: Institute of Electrical and Electronics Engineers Inc..
MLA:
Mandapati, R., et al. "High performance sub-430°C epitaxial silicon PIN selector for 3D RRAM." Proceedings of the 72nd Device Research Conference, DRC 2014, USA Institute of Electrical and Electronics Engineers Inc., 2014. 241-242.
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