Spin accumulation in n-Ge on Si with sputtered Mn5Ge 3C0.8-contacts

Fischer IA, Chang LT, Sürgers C, Chiussi S, Wang KL, Schulze J (2014)

Publication Type: Conference contribution

Publication year: 2014

Publisher: IEEE Computer Society

Pages Range: 113-114

Conference Proceedings Title: 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Event location: SGP

ISBN: 9781479954285

DOI: 10.1109/ISTDM.2014.6874647

Abstract

We demonstrate electrical injection of spin-polarized electrons from sputtered Mn5Ge3C0.8 contacts into degenerately doped n-Ge layers on Si as an important step towards integrating spin injection into Ge channels into a CMOS-compatible fabrication process. © 2014 IEEE.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart DE Germany (DE) University of California Los Angeles (UCLA) US United States (USA) (US) Karlsruhe Institute of Technology (KIT) DE Germany (DE) University of Vigo / Universidade de Vigo ES Spain (ES)

How to cite

APA:

Fischer, I.A., Chang, L.T., Sürgers, C., Chiussi, S., Wang, K.L., & Schulze, J. (2014). Spin accumulation in n-Ge on Si with sputtered Mn5Ge 3C0.8-contacts. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 113-114). SGP: IEEE Computer Society.

MLA:

Fischer, Inga A., et al. "Spin accumulation in n-Ge on Si with sputtered Mn5Ge 3C0.8-contacts." Proceedings of the 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, SGP IEEE Computer Society, 2014. 113-114.

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