Optical bleaching in electrical pumped n-doped Ge on Si optical devices

Koerner R, Oehme M, Gollhofer M, Kostecki K, Schmid M, Bechler S, Widmann D, Kasper E, Schulze J (2014)

Publication Type: Conference contribution

Publication year: 2014

Publisher: IEEE Computer Society

Pages Range: 121-122

Conference Proceedings Title: 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Event location: SGP

ISBN: 9781479954285

DOI: 10.1109/ISTDM.2014.6874655

Abstract

In this presentation we discussed the growth and the optical properties of n-doped Ge lateral LEDs. We showed, that the optical bleaching of the material and the corresponding decrease of net absorption in the Fabry-Perot cavity leads to higher electroluminescence intensity. This is a very important step to achieve net-gain inside the indirect semiconductor material Ge and to build a laser device5 with low threshold current densities. © 2014 IEEE.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Koerner, R., Oehme, M., Gollhofer, M., Kostecki, K., Schmid, M., Bechler, S.,... Schulze, J. (2014). Optical bleaching in electrical pumped n-doped Ge on Si optical devices. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 121-122). SGP: IEEE Computer Society.

MLA:

Koerner, R., et al. "Optical bleaching in electrical pumped n-doped Ge on Si optical devices." Proceedings of the 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, SGP IEEE Computer Society, 2014. 121-122.

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