Virtual substrate technology for Ge1-XSnX heteroepitaxy on Si substrates

Kostecki K, Oehme M, Koerner R, Widmann D, Gollhofer M, Bechler S, Mussler G, Buca D, Kasper E, Schulze J (2014)

Publication Type: Conference contribution

Publication year: 2014

Journal

ECS Transactions Electrochemical Society

Publisher: Electrochemical Society Inc.

Book Volume: 64

Pages Range: 811-818

Conference Proceedings Title: ECS Transactions

Event location: Cancun MX

DOI: 10.1149/06406.0811ecst

Abstract

Two new types of Ge1-XSnX virtual substrate (VS) with a Sn concentration of 2 % and 4 % were fabricated. The two types consist of a non-annealed directly on Si grown Ge1-XSnX VS and an annealed Ge1-XSnX VS on Ge VS. The complete layer structure is grown by means of ultra-low temperature molecular beam epitaxy (MBE) in order to suppress the Sn segregation. For an electrical and optical characterization, the VS technology is used to grow p-i-n photodetectors. The dark current characteristics show a higher dark current for Ge1-XSnX directly on Si, also the responsivity and the emission intensity are lower due to more dislocations.

Involved external institutions

Universität Stuttgart DE Germany (DE) Forschungszentrum Jülich / Research Centre Jülich (FZJ) DE Germany (DE)

How to cite

APA:

Kostecki, K., Oehme, M., Koerner, R., Widmann, D., Gollhofer, M., Bechler, S.,... Schulze, J. (2014). Virtual substrate technology for Ge1-XSnX heteroepitaxy on Si substrates. In Benjamin Vincent, Atsushi Ogura, David Harame, Matty Caymax, Seiichi Miyazaki, Guofu Niu, Bernd Tillack, Bernd Tillack, Alexander Reznicek, Marc Heyns, Gianlorenzo Masini, Krishna Saraswat, Yee-Chia Yeo, Junich Murota (Eds.), ECS Transactions (pp. 811-818). Cancun, MX: Electrochemical Society Inc..

MLA:

Kostecki, K., et al. "Virtual substrate technology for Ge1-XSnX heteroepitaxy on Si substrates." Proceedings of the 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun Ed. Benjamin Vincent, Atsushi Ogura, David Harame, Matty Caymax, Seiichi Miyazaki, Guofu Niu, Bernd Tillack, Bernd Tillack, Alexander Reznicek, Marc Heyns, Gianlorenzo Masini, Krishna Saraswat, Yee-Chia Yeo, Junich Murota, Electrochemical Society Inc., 2014. 811-818.

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