Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si

Fischer IA, Chang LT, Suergers C, Rolseth E, Reiter S, Stefanov S, Chiussi S, Tang J, Wang KL, Schulze J (2014)

Publication Type: Journal article

Publication year: 2014

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 105

Article Number: 222408

Journal Issue: 22

DOI: 10.1063/1.4903233

Abstract

We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n⁺-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4 K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart

Germany (DE) University of California Los Angeles (UCLA)

United States (USA) (US) Karlsruhe Institute of Technology (KIT)

Germany (DE) University of Vigo / Universidade de Vigo

Spain (ES)

How to cite

APA:

Fischer, I.A., Chang, L.-T., Suergers, C., Rolseth, E., Reiter, S., Stefanov, S.,... Schulze, J. (2014). Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si. Applied Physics Letters, 105(22). https://doi.org/10.1063/1.4903233

MLA:

Fischer, Inga Anita, et al. "Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si." Applied Physics Letters 105.22 (2014).

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