Tuning the Ge(Sn) tunneling FET: Influence of drain doping, short channel, and Sn content

Haehnel D, Fischer IA, Hornung A, Koellner AC, Schulze J (2015)

Publication Type: Journal article

Publication year: 2015

Journal

IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE)

Book Volume: 62

Pages Range: 36-43

Article Number: 6971098

Journal Issue: 1

DOI: 10.1109/TED.2014.2371065

Abstract

We present experimental results on the realization of p-channel mode Ge(Sn) heterojunction band-to-band tunneling field effect transistors. We investigate the influence of three device parameters (drain doping, channel length, and tunnel barrier height at source side) of the semiconductor body of the devices on the device performance. We achieve a complete suppression of the n-channel mode in p-type operating conditions by systematically reducing the p-type drain doping from 1·10²⁰to 2·10¹⁷cm^-3 , examined in sample series A. In the second sample series B, we investigate the influence of a reduction of the channel length down to 15 nm on transistor performance. To improve the ON current IONwithout degrading the OFF current IOFF, we introduce a 10-nm delta layer of a Ge1-xSnx alloy at the source/channel junction in the third sample series C. We demonstrate an improved ON current I^ONcompared with the reference sample without a GeSn delta layer.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart

Germany (DE)

How to cite

APA:

Haehnel, D., Fischer, I.A., Hornung, A., Koellner, A.-C., & Schulze, J. (2015). Tuning the Ge(Sn) tunneling FET: Influence of drain doping, short channel, and Sn content. IEEE Transactions on Electron Devices, 62(1), 36-43. https://doi.org/10.1109/TED.2014.2371065

MLA:

Haehnel, Daniel, et al. "Tuning the Ge(Sn) tunneling FET: Influence of drain doping, short channel, and Sn content." IEEE Transactions on Electron Devices 62.1 (2015): 36-43.

BibTeX: Download