Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis

Oliveira F, Fischer IA, Benedetti A, Cerqueira MF, Vasilevskiy MI, Stefanov SK, Chiussi S, Schulze J (2015)

Publication Type: Journal article

Publication year: 2015

Journal

Journal of Applied Physics AIP Publishing

Book Volume: 117

Article Number: 125706

Journal Issue: 12

DOI: 10.1063/1.4915939

Abstract

We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350°C. Samples consist of layers (from 1 up to 10) of Ge0.96Sn0.04 self-assembled dots separated by Si spacer layers, 10nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy, and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.

Involved external institutions

Universität Stuttgart DE Germany (DE) University of Vigo / Universidade de Vigo ES Spain (ES) Universidade do Minho PT Portugal (PT)

How to cite

APA:

Oliveira, F., Fischer, I.A., Benedetti, A., Cerqueira, M.F., Vasilevskiy, M.I., Stefanov, S.K.,... Schulze, J. (2015). Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis. Journal of Applied Physics, 117(12). https://dx.doi.org/10.1063/1.4915939

MLA:

Oliveira, F., et al. "Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis." Journal of Applied Physics 117.12 (2015).

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