A Bulk Planar SiGe Quantum-Well Based ZRAM with Low VT Variability
Dutta S, Mittal S, Lodha S, Ganguly U, Schulze J (2015)
Publication Type: Conference contribution
Publication year: 2015
Publisher: Institute of Electrical and Electronics Engineers Inc.
Conference Proceedings Title: 2015 IEEE 7th International Memory Workshop, IMW 2015
Event location: Monterey, CA
ISBN: 9781467369312
Abstract
A planar bulk ZRAM is attractive from a simplicity, cost and scalability perspective - compared to SOI or FinFET based designs. Alternatively, the highly doped p-channel bulk planar ZRAM with electrostatic potential well- based hole-storage is susceptible to random- dopant-fluctuation (RDF) induced VT variability. Here, we propose and evaluate a planar bulk ZRAM device with an intrinsic channel of Si/SiGe/Si hetero-structure epitaxially grown on an n+Si well. TCAD simulations show excellent performance of 660mV VT shift at +/-1.5V operation and IREAD difference of 45A/m. In terms of RDF based VT variability, a VT of 12.8 mV is observed which is estimated to be a small fraction (∼51×) of the estimate VT shift (660mV) and 6.47× lower compared to p-doped channel based ZRAM. Initial experiments on MOSCAP devices validate the hole-storage in the SiGe well with a 0.5V VT shift and an excellent read disturb (>1000s).
Involved external institutions
India (IN)
Germany (DE)How to cite
APA:
Dutta, S., Mittal, S., Lodha, S., Ganguly, U., & Schulze, J. (2015). A Bulk Planar SiGe Quantum-Well Based ZRAM with Low VT Variability. In 2015 IEEE 7th International Memory Workshop, IMW 2015. Monterey, CA, US: Institute of Electrical and Electronics Engineers Inc..
MLA:
Dutta, S., et al. "A Bulk Planar SiGe Quantum-Well Based ZRAM with Low VT Variability." Proceedings of the 2015 7th IEEE International Memory Workshop, IMW 2015, Monterey, CA Institute of Electrical and Electronics Engineers Inc., 2015.
BibTeX: Download