Absorption coefficients of GeSn extracted from PIN photodetector response
Ye K, Zhang W, Oehme M, Schmid M, Gollhofer M, Kostecki K, Widmann D, Koerner R, Kasper E, Schulze J (2015)
Publication Type: Journal article
Publication year: 2015
Journal
Book Volume: 110
Pages Range: 71-75
DOI: 10.1016/j.sse.2015.01.017
Abstract
In this paper the optical absorption of the GeSn PIN photodetector was investigated. The vertical GeSn PIN photodetectors were fabricated by molecular beam epitaxy (MBE) and dry etching. By means of current density-voltage (J-V) and capacity-voltage (C-V) measurements the photodetector device was characterized. The absorption coefficients of GeSn material were finally extracted from the optical response of PIN structure. With further direct bandgap analysis the influences of device structure was proved negligible.
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APA:
Ye, K., Zhang, W., Oehme, M., Schmid, M., Gollhofer, M., Kostecki, K.,... Schulze, J. (2015). Absorption coefficients of GeSn extracted from PIN photodetector response. Solid-State Electronics, 110, 71-75. https://doi.org/10.1016/j.sse.2015.01.017
MLA:
Ye, Kaiheng, et al. "Absorption coefficients of GeSn extracted from PIN photodetector response." Solid-State Electronics 110 (2015): 71-75.
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