Ge-on-Si photodiode with black silicon boosted responsivity

Steglich M, Oehme M, Kaesebier T, Zilk M, Kostecki K, Kley EB, Schulze J, Tuennermann A (2015)

Publication Type: Journal article

Publication year: 2015

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 107

Article Number: 051103

Journal Issue: 5

DOI: 10.1063/1.4927836

Abstract

Normal-incidence Ge-on-Si photodiodes with 300nm thick intrinsic Ge absorber layer and black silicon light-trapping are fabricated and analyzed with regard to their responsivity. Compared to a standard Ge-on-Si photodiode without black silicon, the black silicon device exhibits a 3-times increased responsivity of 0.34A/W at 1550nm. By that, the problematic bandwidth-responsivity trade-off in ultrafast Ge-on-Si detectors can be widely overcome. The black silicon light-trapping structure can be applied to the device rear during back-end processing.

Involved external institutions

Friedrich-Schiller-Universität Jena DE Germany (DE) Universität Stuttgart DE Germany (DE)

How to cite

APA:

Steglich, M., Oehme, M., Kaesebier, T., Zilk, M., Kostecki, K., Kley, E.-B.,... Tuennermann, A. (2015). Ge-on-Si photodiode with black silicon boosted responsivity. Applied Physics Letters, 107(5). https://dx.doi.org/10.1063/1.4927836

MLA:

Steglich, M., et al. "Ge-on-Si photodiode with black silicon boosted responsivity." Applied Physics Letters 107.5 (2015).

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