Low temperature epitaxial germanium P+IN+IP+ selector for RRAM

Srinivasan VS, Das B, Sangwan V, Gómez CP, Oehme M, Ganguly U, Schulze J (2015)

Publication Type: Conference contribution

Publication year: 2015

Publisher: Institute of Electrical and Electronics Engineers Inc.

Book Volume: 2015-August

Pages Range: 289-290

Conference Proceedings Title: Device Research Conference - Conference Digest, DRC

Event location: Columbus, OH US

ISBN: 9781467381345

DOI: 10.1109/DRC.2015.7175689

Abstract

Low temperature (< 160 °C epi temperature) Ge based punch through selector has been demonstrated with good Ion/Ioff and matched with TCAD results. High Jon verifies the high dopant activation at low temperature. Benchmarking with the available selector technologies, Jon/Joff >104 with voltage designability makes Ge based selector an attractive option for RRAM.

Involved external institutions

Universität Stuttgart DE Germany (DE) Indian Institute of Technology Bombay IN India (IN)

How to cite

APA:

Srinivasan, V.S., Das, B., Sangwan, V., Gómez, C.P., Oehme, M., Ganguly, U., & Schulze, J. (2015). Low temperature epitaxial germanium P+IN+IP+ selector for RRAM. In Device Research Conference - Conference Digest, DRC (pp. 289-290). Columbus, OH, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Srinivasan, V. S.Senthil, et al. "Low temperature epitaxial germanium P+IN+IP+ selector for RRAM." Proceedings of the 73rd Annual Device Research Conference, DRC 2015, Columbus, OH Institute of Electrical and Electronics Engineers Inc., 2015. 289-290.

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