Growth and characterization of SiGeSn quantum well photodiodes
Fischer IA, Wendav T, Augel L, Jitpakdeebodin S, Oliveira F, Benedetti A, Stefanov S, Chiussi S, Capellini G, Busch K, Schulze J (2015)
Publication Type: Journal article
Publication year: 2015
Journal
Book Volume: 23
Pages Range: 25048-25057
Journal Issue: 19
DOI: 10.1364/OE.23.025048
Abstract
We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and barrier thicknesses of 10 nm each are sandwiched between B- and Sb-doped Ge-regions, were fabricated as single-mesa devices, using a low-temperature fabrication process. We discuss measurements of the diode characteristics, optical responsivity and room-temperature electroluminescence and compare with theoretical predictions from band structure calculations.
Authors with CRIS profile
Involved external institutions
Universität Stuttgart
Germany (DE)
Humboldt-Universität zu Berlin
Germany (DE)
University of Vigo / Universidade de Vigo
Spain (ES)
Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics
Germany (DE)
Germany (DE)
Humboldt-Universität zu Berlin
Germany (DE)
University of Vigo / Universidade de Vigo
Spain (ES)
Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics
Germany (DE)
How to cite
APA:
Fischer, I.A., Wendav, T., Augel, L., Jitpakdeebodin, S., Oliveira, F., Benedetti, A.,... Schulze, J. (2015). Growth and characterization of SiGeSn quantum well photodiodes. Optics Express, 23(19), 25048-25057. https://doi.org/10.1364/OE.23.025048
MLA:
Fischer, Inga A., et al. "Growth and characterization of SiGeSn quantum well photodiodes." Optics Express 23.19 (2015): 25048-25057.
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