A monolithically integrated opto-electronic clock converter in photonic SiGe-BiCMOS technology

Krueger B, Makon RE, Landolt O, Krune E, Knoll D, Lischke S, Schulze J (2015)


Publication Type: Conference contribution

Publication year: 2015

Publisher: Institute of Electrical and Electronics Engineers Inc.

Book Volume: 2015-November

Pages Range: 129-132

Conference Proceedings Title: Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Event location: Boston, MA US

ISBN: 9781467385510

DOI: 10.1109/BCTM.2015.7340585

Abstract

A novel monolithic opto-electronic clock converter integrated in a photonic SiGe-BiCMOS technology is presented, which turns an ultrashort optical pulse train generated by a hybrid mode-locked laser into a low-jitter electrical square wave with sharp transitions. The integrated circuit includes optical waveguides as well as grating couplers, a high-bandwidth (> 30 GHz) Ge-photodiode, a frequency divider-by-two implemented by SiGe bipolar transistors, photodiode characterization circuits and an optical monitoring path. The integrated circuit has been successfully tested at laser pulse repetition rates of up to 10 GHz. At this pulse repetition rate, the generated 5 GHz electrical square wave signal features a wideband phase noise floor <-160 dBc/Hz and an jitter tj < 1 fs while integrating the phase noise at offset frequencies between 2 kHz and 30 MHz.

Involved external institutions

How to cite

APA:

Krueger, B., Makon, R.E., Landolt, O., Krune, E., Knoll, D., Lischke, S., & Schulze, J. (2015). A monolithically integrated opto-electronic clock converter in photonic SiGe-BiCMOS technology. In Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 129-132). Boston, MA, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Krueger, B., et al. "A monolithically integrated opto-electronic clock converter in photonic SiGe-BiCMOS technology." Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2015, Boston, MA Institute of Electrical and Electronics Engineers Inc., 2015. 129-132.

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