Improved Off-Current and Modeling in Sub-430 °c Si p-i-n Selector for Unipolar Resistive Random Access Memory

Mandapati R, Shrivastava S, Sushama S, Saha B, Schulze J, Ganguly U (2015)

Publication Type: Journal article

Publication year: 2015

Journal

IEEE Electron Device Letters Institute of Electrical and Electronics Engineers (IEEE)

Book Volume: 36

Pages Range: 1310-1313

Article Number: 7299263

Journal Issue: 12

DOI: 10.1109/LED.2015.2491221

Abstract

Despite the excellent performance of silicon-based selector devices, high epitaxy temperature (Tepi>700° C) is the key constraint for Si selector technology compatibility with back-end-of-the-line (BEOL) process. Recently, we have demonstrated the high performance sub-430 °C epitaxial Si p-i-n selector. In this letter, we identify a two-step mechanism that affects the off-current (IOFF) performance of low temperature epitaxial Si p-i-n diodes using molecular beam epitaxy (MBE). First, the Tepi dependent i-region encroachment by surface dopant segregation shows excellent agreement with the surface diffusion model and demonstrates its validity down to 400 °C. Second, the trap assisted tunneling model is used to evaluate the impact of the modified i-region thickness (due to surface dopant segregation) on IOFF. Improved ideality factor (2×) and IOFF performance (102×) of sub-430 °C p-i-n diode is related to contamination control-a critical challenge in BEOL processing. Based on the experimentally validated model, we present the IOFF dependence on the i-region thickness. We show that i-region thickness of 50 nm produces sufficiently low leakage, while higher i-region produces marginal IOFF improvement. Thus, the low temperature epitaxial Si p-i-n junction technology is a promising step toward BEOL compatible Si selector technology.

Involved external institutions

Indian Institute of Technology Bombay IN India (IN) Universität Stuttgart DE Germany (DE)

How to cite

APA:

Mandapati, R., Shrivastava, S., Sushama, S., Saha, B., Schulze, J., & Ganguly, U. (2015). Improved Off-Current and Modeling in Sub-430 °c Si p-i-n Selector for Unipolar Resistive Random Access Memory. IEEE Electron Device Letters, 36(12), 1310-1313. https://dx.doi.org/10.1109/LED.2015.2491221

MLA:

Mandapati, R., et al. "Improved Off-Current and Modeling in Sub-430 °c Si p-i-n Selector for Unipolar Resistive Random Access Memory." IEEE Electron Device Letters 36.12 (2015): 1310-1313.

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