Analysis of EL emitted by LEDs on Si substrates containing GeSn/Ge multi quantum wells as active layers

Schwartz B, Saring P, Arguirov T, Oehme M, Kostecki K, Kasper E, Schulze J, Kittler M (2016)

Publication Type: Conference contribution

Publication year: 2016

Journal

Solid State Phenomena Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Book Volume: 242

Pages Range: 361-367

Conference Proceedings Title: Solid State Phenomena

Event location: Bad Staffelstein DE

ISBN: 9783038356080

DOI: 10.4028/www.scientific.net/SSP.242.361

Abstract

We analyzed multi quantum well light emitting diodes, consisting of ten alternating GeSn/Ge layers, were grown by molecular beam epitaxy on Si. The Ge barriers were 10 nm thick and the GeSn wells were grown with 7% Sn and thicknesses between 6 and 12 nm. Despite the high threading dislocation density in the range of 109 cm-2 the electroluminescence spectra measured at 300 and 80 K yield a broad and intensive luminescence band. Deconvolution revealed three major lines produced by the GeSn wells that can be interpreted in terms of quantum confinement. Biaxial compressive strain causes a splitting of light and heavy holes in the GeSn wells. We interpret the three lines to represent two direct lines, formed by transitions with the light and heavy hole band, respectively, and an indirect line.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Brandenburgische Technische Universität Cottbus-Senftenberg (BTU) DE Germany (DE) Universität Stuttgart DE Germany (DE)

How to cite

APA:

Schwartz, B., Saring, P., Arguirov, T., Oehme, M., Kostecki, K., Kasper, E.,... Kittler, M. (2016). Analysis of EL emitted by LEDs on Si substrates containing GeSn/Ge multi quantum wells as active layers. In Peter Pichler, Peter Pichler (Eds.), Solid State Phenomena (pp. 361-367). Bad Staffelstein, DE: Trans Tech Publications Ltd.

MLA:

Schwartz, Bernhard, et al. "Analysis of EL emitted by LEDs on Si substrates containing GeSn/Ge multi quantum wells as active layers." Proceedings of the 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015, Bad Staffelstein Ed. Peter Pichler, Peter Pichler, Trans Tech Publications Ltd, 2016. 361-367.

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