Ge and GeSn light emitters on Si
Oehme M, Gollhofer M, Kostecki K, Koerner R, Bechler S, Widmann D, Arguirov T, Kittler M, Schulze J (2016)
Publication Type: Conference contribution
Publication year: 2016
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 242
Pages Range: 353-360
Conference Proceedings Title: Solid State Phenomena
Event location: Bad Staffelstein
ISBN: 9783038356080
DOI: 10.4028/www.scientific.net/SSP.242.353
Abstract
The heteroepitaxial growth of GeSn and Ge crystals on Si substrates are investigated for Si-based photonic applications. Light Emitting Diodes with emission wavelengths from 2,100 to 1,550 nm could be demonstrated with active intrinsic GeSn light emitting layers between Ge barriers. A clear shift of the direct band gap toward the infrared beyond 2 μm is measured. Emission intensity is increased compared to Ge Light Emitting Diodes. Room temperature lasing from electrically pumped n-type doped Ge edge emitting devices are demonstrated. The edge emitter is formed by cleaving Si-Ge waveguide heterodiodes, providing optical feedback through a Fabry-Pérot resonator. The electroluminescence spectra of the devices showed optical bleaching and intensity gain for wavelengths between 1,660 nm and 1,700 nm.
Authors with CRIS profile
Involved external institutions
Universität Stuttgart
Germany (DE)
Brandenburgische Technische Universität Cottbus-Senftenberg (BTU)
Germany (DE)
Germany (DE)
Brandenburgische Technische Universität Cottbus-Senftenberg (BTU)
Germany (DE)
How to cite
APA:
Oehme, M., Gollhofer, M., Kostecki, K., Koerner, R., Bechler, S., Widmann, D.,... Schulze, J. (2016). Ge and GeSn light emitters on Si. In Peter Pichler (Eds.), Solid State Phenomena (pp. 353-360). Bad Staffelstein, DE: Trans Tech Publications Ltd.
MLA:
Oehme, Michael, et al. "Ge and GeSn light emitters on Si." Proceedings of the 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015, Bad Staffelstein Ed. Peter Pichler, Trans Tech Publications Ltd, 2016. 353-360.
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