S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode
Zhang W, Yamamoto Y, Oehme M, Matthies K, Raju AI, Srinivasan VSS, Koerner R, Gollhofer M, Bechler S, Funk H, Tillack B, Kasper E, Schulze J (2016)
Publication Type: Journal article
Publication year: 2016
Journal
Book Volume: 55
Article Number: 04EF03
Journal Issue: 4
Abstract
Five silicon (Si) p++-n%-n++ samples were grown at various doping concentrations (1.0 × 1017-2.2 × 1017cm-3) in an n- layer by using the reduced-pressure CVD technique. By using these samples, 30 × 2μm2 single-drift (SD) impact-ionization avalanche transit-time (IMPATT) diodes were processed with Si-based monolithic millimeter-wave integrated circuit (SIMMWIC) technology.1,2) The samples within a small process window exhibited a large negative differential resistance at approximately the avalanche frequency, as confirmed by small-signal S-parameter characterization. A model based on depletion width was given to explain the conditions for the appearance of the negative differential IMPATT resistance, which is the basis of millimeter-wave amplifier and oscillator applications. Furthermore, a measurement-based small-signal lumpedelement model was established to describe the IMPATT functionality from the circuit component aspect. This lumped-element model shows a negative differential resistance within a well-defined range in the given element parameters, which can explain the experimental observations.
Authors with CRIS profile
Involved external institutions
Universität Stuttgart
Germany (DE)
Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics
Germany (DE)
Germany (DE)
Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics
Germany (DE)
How to cite
APA:
Zhang, W., Yamamoto, Y., Oehme, M., Matthies, K., Raju, A.I., Srinivasan, V.S.S.,... Schulze, J. (2016). S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode. Japanese Journal of Applied Physics, 55(4). https://doi.org/10.7567/JJAP.55.04EF03
MLA:
Zhang, Wogong, et al. "S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode." Japanese Journal of Applied Physics 55.4 (2016).
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