Compositional dependence of the band-gap of Ge1-x-YSixSny alloys

Wendav T, Fischer IA, Montanari M, Zoellner MH, Klesse W, Capellini G, Von Den Driesch N, Oehme M, Buca D, Busch K, Schulze J (2016)

Publication Type: Journal article

Publication year: 2016

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 108

Article Number: 242104

Journal Issue: 24

DOI: 10.1063/1.4953784

Abstract

The group-IV semiconductor alloy Ge1- x - ySixSny has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge1- x - ySixSny alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Forschungszentrum Jülich / Research Centre Jülich (FZJ) DE Germany (DE) Universität Stuttgart DE Germany (DE) Humboldt-Universität zu Berlin DE Germany (DE) Università degli Studi Roma Tre IT Italy (IT)

How to cite

APA:

Wendav, T., Fischer, I.A., Montanari, M., Zoellner, M.H., Klesse, W., Capellini, G.,... Schulze, J. (2016). Compositional dependence of the band-gap of Ge1-x-YSixSny alloys. Applied Physics Letters, 108(24). https://doi.org/10.1063/1.4953784

MLA:

Wendav, Torsten, et al. "Compositional dependence of the band-gap of Ge1-x-YSixSny alloys." Applied Physics Letters 108.24 (2016).

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