Contact resistivities of antimony-doped n-type Ge1-xSn x

Srinivasan VSS, Fischer IA, Augel L, Hornung A, Koerner R, Kostecki K, Oehme M, Rolseth E, Schulze J (2016)

Publication Type: Journal article

Publication year: 2016

Journal

Semiconductor Science and Technology Institute of Physics: Hybrid Open Access

Book Volume: 31

Article Number: 08LT01

Journal Issue: 8

DOI: 10.1088/0268-1242/31/8/08LT01

Abstract

As Ge1-xSn x is being investigated for CMOS applications, obtaining contacts to n-type Ge1-xSn x with low specific contact resistivity (ρ c) is a major concern. Here, we present results on specific contact resistivities of Sb doped n-type Ge1-xSn x with 0 ≤ x ≤ 0.08 also with varying doping concentrations using Ni, Ag and Mn as contact metals. Our results show that Ni offers the lowest ρ c for all x values of Ge1-xSn x . The lowest ρ c measured for Ni contacts on highly n-doped Ge0.92Sn0.08 is 2.29 × 10-6 Ω cm2. We find a strong dependence of the specific contact resistivity on doping, which we attribute to the fact that strong Fermi level pinning is present in metal/n-Ge1-xSn x contacts.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Srinivasan, V.S.S., Fischer, I.A., Augel, L., Hornung, A., Koerner, R., Kostecki, K.,... Schulze, J. (2016). Contact resistivities of antimony-doped n-type Ge1-xSn x. Semiconductor Science and Technology, 31(8). https://doi.org/10.1088/0268-1242/31/8/08LT01

MLA:

Srinivasan, V. S. Senthil, et al. "Contact resistivities of antimony-doped n-type Ge1-xSn x." Semiconductor Science and Technology 31.8 (2016).

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