The Zener-Emitter: Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source

Koerner R, Oehme M, Kostecki K, Fischer IA, Rolseth E, Bechler S, Yorgidis M, Blech A, Latzl O, Schulze J (2016)

Publication Type: Conference contribution

Publication year: 2016

Publisher: Institute of Electrical and Electronics Engineers Inc.

Book Volume: 2016-August

Conference Proceedings Title: Device Research Conference - Conference Digest, DRC

Event location: Newark, DE US

ISBN: 9781509028276

DOI: 10.1109/DRC.2016.7548478

Abstract

While monolithically integrated light sources for Si photonics have been investigated using Ge and GeSn on Si substrates [1-3], the challenges in material quality and efficiency remain to be solved. Turning the Group-IV material into a direct semiconductor for CMOS compatible concepts [4] promises enhanced electrical to optical conversion efficiencies. However, the red-shift in emitting wavelength is challenging for the peripheral devices such as modulators and photodetectors in complex optoelectronic integrated circuits (OEICs) [5]. We investigated a new concept by utilizing a reverse biased Ge p+n Zener diode for injection of electrons into a forward biased light emitting Ge p+-i-n diode providing holes for the radiative transition. In Ge, the direct band-to-band tunneling (BTBT) dominates over the phonon assisted indirect BTBT, which is highly beneficial for the Zener-Emitter [6]. Moreover, possible low voltage operation due to highly conductive Ge tunnel diodes and avoidance of current crowding effects by the high-energetic electron filtering mechanism of Zener diodes are further increasing the electrical injection efficiency [7].

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Koerner, R., Oehme, M., Kostecki, K., Fischer, I.A., Rolseth, E., Bechler, S.,... Schulze, J. (2016). The Zener-Emitter: Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source. In Device Research Conference - Conference Digest, DRC. Newark, DE, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Koerner, R., et al. "The Zener-Emitter: Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source." Proceedings of the 74th Annual Device Research Conference, DRC 2016, Newark, DE Institute of Electrical and Electronics Engineers Inc., 2016.

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