Augel L, Fischer IA, Hornung F, Dressel M, Berrier A, Oehme M, Schulze J (2016)
Publication Type: Journal article
Publication year: 2016
Book Volume: 41
Pages Range: 4398-4400
Journal Issue: 18
DOI: 10.1364/OL.41.004398
GeSn as a group-IV material opens up new possibilities for realizing photonic device concepts in Si-compatible fabrication processes. Here we present results of the ellipsometric characterization of highly p- and n-type doped Ge
APA:
Augel, L., Fischer, I.A., Hornung, F., Dressel, M., Berrier, A., Oehme, M., & Schulze, J. (2016). Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications. Optics Letters, 41(18), 4398-4400. https://doi.org/10.1364/OL.41.004398
MLA:
Augel, Lion, et al. "Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications." Optics Letters 41.18 (2016): 4398-4400.
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