Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications

Augel L, Fischer IA, Hornung F, Dressel M, Berrier A, Oehme M, Schulze J (2016)

Publication Type: Journal article

Publication year: 2016

Journal

Optics Letters Optical Society of America

Book Volume: 41

Pages Range: 4398-4400

Journal Issue: 18

DOI: 10.1364/OL.41.004398

Abstract

GeSn as a group-IV material opens up new possibilities for realizing photonic device concepts in Si-compatible fabrication processes. Here we present results of the ellipsometric characterization of highly p- and n-type doped Ge0.95Sn0.05 alloys deposited on Si substrates investigated in the wavelength range from 1 to 16 μm. We discuss the suitability of these films for integrated plasmonic applications in the infrared region.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Augel, L., Fischer, I.A., Hornung, F., Dressel, M., Berrier, A., Oehme, M., & Schulze, J. (2016). Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications. Optics Letters, 41(18), 4398-4400. https://doi.org/10.1364/OL.41.004398

MLA:

Augel, Lion, et al. "Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications." Optics Letters 41.18 (2016): 4398-4400.

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