Wendav T, Fischer IA, Virgilio M, Capellini G, Oliveira F, Cerqueira MF, Benedetti A, Chiussi S, Zaumseil P, Schwartz B, Busch K, Schulze J (2016)
Publication Type: Journal article
Publication year: 2016
Book Volume: 94
Article Number: 245304
Journal Issue: 24
DOI: 10.1103/PhysRevB.94.245304
Employing a low-temperature growth mode, we fabricated ultrathin Si1-xGex/Si multiple quantum well structures with a well thickness of less than 1.5 nm and a Ge concentration above 60% directly on a Si substrate. We identified an unusual temperature-dependent blueshift of the photoluminescence (PL) and exceptionally low thermal quenching. We find that this behavior is related to the relative intensities of the no-phonon (NP) peak and a phonon-assisted replica that are the main contributors to the total PL signal. To investigate these aspects in more detail, we developed a strategy to calculate the PL spectrum employing a self-consistent multivalley effective mass model, in combination with second-order perturbation theory. Through our investigation, we find that while the phonon-assisted feature decreases with temperature, the NP feature shows a strong increase in the recombination rate. Besides leading to the observed robustness against thermal quenching, this causes the observed blueshift of the total PL signal.
APA:
Wendav, T., Fischer, I.A., Virgilio, M., Capellini, G., Oliveira, F., Cerqueira, M.F.,... Schulze, J. (2016). Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling. Physical Review B, 94(24). https://doi.org/10.1103/PhysRevB.94.245304
MLA:
Wendav, T., et al. "Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling." Physical Review B 94.24 (2016).
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