Impact of Sn segregation on Ge1-xSnx epi-layers growth by RP-CVD
Weisshaupt D, Jahandar P, Colston G, Allred P, Schulze J, Myronov M (2017)
Publication Type: Conference contribution
Publication year: 2017
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 43-47
Conference Proceedings Title: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017 - Proceedings
Event location: Opatija
ISBN: 9789532330922
DOI: 10.23919/MIPRO.2017.7973388
Abstract
This work investigates the impact of Sn segregation on the growth of Ge1-xSnx epi-layers using a reduced pressure chemical vapour deposition (RP-CVD) system with the common precursors Ge2H6 and SnCl4. The investigated samples were grown on top of a 1 μm thick relaxed Ge buffer layer with different amounts of Sn incorporation, achieved by increasing the SnCl4 partial pressure. The grown Ge1-xSnx epi-layers themselves are fully strained with respect to the Ge buffer underneath. A range of advanced analytical techniques have been used to characterize the material properties. The crystal structure, quality and thickness of the Ge1-xSnx epi-layers were analysed by using cross-sectional high resolution transmission electron microscopy, high resolution X-ray diffraction and fourier transform infrared spectrometry. Atomic force microscopy and Scanning electron microscopy in combination with energy dispersive X-ray spectroscopy are used for analysing the surface. It is shown that simply increasing the SnCl4 partial pressure is insufficient for achieving Sn contents beyond ∼8%. Above these concentrations the epitaxial growth breaks down due to the segregation of Sn resulting in the formation of dots on the epilayer surface, which consist of pure Sn.
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APA:
Weisshaupt, D., Jahandar, P., Colston, G., Allred, P., Schulze, J., & Myronov, M. (2017). Impact of Sn segregation on Ge1-xSnx epi-layers growth by RP-CVD. In Marina Cicin-Sain, Filip Hormot, Tihana Galinac Grbac, Boris Vrdoljak, Edvard Tijan, Karolj Skala, Slobodan Ribaric, Stjepan Gros, Vlado Sruk, Mladen Mauher, Petar Biljanovic, Marko Koricic (Eds.), 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017 - Proceedings (pp. 43-47). Opatija, HU: Institute of Electrical and Electronics Engineers Inc..
MLA:
Weisshaupt, David, et al. "Impact of Sn segregation on Ge1-xSnx epi-layers growth by RP-CVD." Proceedings of the 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017, Opatija Ed. Marina Cicin-Sain, Filip Hormot, Tihana Galinac Grbac, Boris Vrdoljak, Edvard Tijan, Karolj Skala, Slobodan Ribaric, Stjepan Gros, Vlado Sruk, Mladen Mauher, Petar Biljanovic, Marko Koricic, Institute of Electrical and Electronics Engineers Inc., 2017. 43-47.
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