Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy

Schlipf J, Frieiro JL, Fischer IA, Serra C, Schulze J, Chiussi S (2017)


Publication Type: Conference contribution

Publication year: 2017

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 37-42

Conference Proceedings Title: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017 - Proceedings

Event location: Opatija HU

ISBN: 9789532330922

DOI: 10.23919/MIPRO.2017.7973387

Abstract

While modulators, waveguides and detectors have been successfully integrated in silicon devices, a laser source still remains a challenge. Unfortunately, in silicon and germanium, indirect band transitions are favored, making laser emission unlikely. Direct bandgap transitions have recently been demonstrated in germanium by introducing tensile strain with heavy n-type doping or by alloying with Sn. GePb alloys seem to be promising candidates here as well, since the required Pb concentration is predicted to be far lower than for Sn.

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How to cite

APA:

Schlipf, J., Frieiro, J.L., Fischer, I.A., Serra, C., Schulze, J., & Chiussi, S. (2017). Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy. In Marina Cicin-Sain, Filip Hormot, Tihana Galinac Grbac, Boris Vrdoljak, Edvard Tijan, Karolj Skala, Slobodan Ribaric, Stjepan Gros, Vlado Sruk, Mladen Mauher, Petar Biljanovic, Marko Koricic (Eds.), 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017 - Proceedings (pp. 37-42). Opatija, HU: Institute of Electrical and Electronics Engineers Inc..

MLA:

Schlipf, J., et al. "Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy." Proceedings of the 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017, Opatija Ed. Marina Cicin-Sain, Filip Hormot, Tihana Galinac Grbac, Boris Vrdoljak, Edvard Tijan, Karolj Skala, Slobodan Ribaric, Stjepan Gros, Vlado Sruk, Mladen Mauher, Petar Biljanovic, Marko Koricic, Institute of Electrical and Electronics Engineers Inc., 2017. 37-42.

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