(Si)GeSn plasmonics
Fischer IA, Augel L, Berrier A, Oehme M, Schulze J (2017)
Publication Type: Conference contribution
Publication year: 2017
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 15-16
Conference Proceedings Title: Summer Topicals Meeting Series, SUM 2017
Event location: San Juan
ISBN: 9781509065707
DOI: 10.1109/PHOSST.2017.8012628
Abstract
Plasmonic nanostructures serve to enhance light-matter interaction at the nanoscale. Metallic nanoantennas in conjunction with group-IV-devices can be used to enhance the efficiency of scaled-down devices [1] or to develop concepts for integrated biosensing [2]. However, for applications at wavelengths in the near-IR and mid-IR range, metals suffer from high Drude damping as a result of the high charge carrier concentration present in these materials [3]. At these wavelengths, highly doped semiconductors can potentially outperform metals as materials for plasmonic antennas. Compared to Ge, GeSn has a lower conductivity effective mass and, thus, can be used to extend the wavelength range for plasmonic applications to the 5-10 μm region [4].
Authors with CRIS profile
Involved external institutions
Germany (DE)How to cite
APA:
Fischer, I.A., Augel, L., Berrier, A., Oehme, M., & Schulze, J. (2017). (Si)GeSn plasmonics. In Summer Topicals Meeting Series, SUM 2017 (pp. 15-16). San Juan, PR: Institute of Electrical and Electronics Engineers Inc..
MLA:
Fischer, Inga Anita, et al. "(Si)GeSn plasmonics." Proceedings of the 2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017, San Juan Institute of Electrical and Electronics Engineers Inc., 2017. 15-16.
BibTeX: Download