Zener tunnel-injection for Ge optical amplifiers, lasers and modulators (invited)
Koerner R, Fischer IA, Oehme M, Clausen C, Schulze J (2017)
Publication Type: Conference contribution
Publication year: 2017
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 11-12
Conference Proceedings Title: 14th International Conference on Group IV Photonics, GFP 2017
Event location: Berlin
ISBN: 9781509065684
DOI: 10.1109/GROUP4.2017.8082171
Abstract
We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation with extinction ratios > 14 dB by sufficient Moss-Burstein shift, for generic Ge-on-Si Photonics platform.
Involved external institutions
How to cite
APA:
Koerner, R., Fischer, I.A., Oehme, M., Clausen, C., & Schulze, J. (2017). Zener tunnel-injection for Ge optical amplifiers, lasers and modulators (invited). In 14th International Conference on Group IV Photonics, GFP 2017 (pp. 11-12). Berlin, DE: Institute of Electrical and Electronics Engineers Inc..
MLA:
Koerner, R., et al. "Zener tunnel-injection for Ge optical amplifiers, lasers and modulators (invited)." Proceedings of the 14th International Conference on Group IV Photonics, GFP 2017, Berlin Institute of Electrical and Electronics Engineers Inc., 2017. 11-12.
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