Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)

Bechler S, Kern M, Funk HS, Colston G, Fischer IA, Weisshaupt D, Myronov M, Van Slageren J, Schulze J (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Semiconductor Science and Technology Institute of Physics: Hybrid Open Access

Book Volume: 33

Article Number: 095008

Journal Issue: 9

DOI: 10.1088/1361-6641/aad4cf

Abstract

Mn5Ge3 can be used as a ferromagnetic contact material to fabricate spintronic devices. Here, we show that Mn5Ge3 can be fabricated with a simple germanidation process by evaporating Mn on undoped and doped Ge on Si followed by a thermal annealing step to form the ferromagnetic Mn5Ge3 phase. This solid phase preparation of Mn5Ge3 is a robust process with a minor dependence on the annealing parameters. The formation of Mn5Ge3 can be realized using undoped as well as highly doped p-Ge and n-Ge with different doping levels. The interface of Mn5Ge3 is atomically sharp which leads to very low contact resistivities < 1 × 10-7 Ω cm2.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart DE Germany (DE) University of Warwick GB United Kingdom (GB)

How to cite

APA:

Bechler, S., Kern, M., Funk, H.S., Colston, G., Fischer, I.A., Weisshaupt, D.,... Schulze, J. (2018). Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111). Semiconductor Science and Technology, 33(9). https://doi.org/10.1088/1361-6641/aad4cf

MLA:

Bechler, Stefan, et al. "Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)." Semiconductor Science and Technology 33.9 (2018).

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