Tunnel Injection into Group IV Semiconductors and its Application to Light-Emitting Devices

Clausen CJ, Fischer IA, Hoppe N, Koerner R, Oehme M, Schwarz D, Schulze J (2018)

Publication Type: Conference contribution

Publication year: 2018

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 31-32

Conference Proceedings Title: IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018

Event location: Waikoloa, HI US

ISBN: 9781538653432

DOI: 10.1109/PHOSST.2018.8456688

Abstract

We present experimental results on using tunnel injection of electrons in Germanium diodes on Silicon substrates for light emission, the Germanium Zener-Emitter. Through tunneling and applying a controlled bias, electrons can be injected into the direct conduction band valley. We discuss the usage for optoelectronic devices.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart DE Germany (DE) TRUMPF Photonic Components / Philips Photonics / U-L-M Photonics GmbH DE Germany (DE)

How to cite

APA:

Clausen, C.J., Fischer, I.A., Hoppe, N., Koerner, R., Oehme, M., Schwarz, D., & Schulze, J. (2018). Tunnel Injection into Group IV Semiconductors and its Application to Light-Emitting Devices. In IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018 (pp. 31-32). Waikoloa, HI, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Clausen, Caterina J., et al. "Tunnel Injection into Group IV Semiconductors and its Application to Light-Emitting Devices." Proceedings of the 2018 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018, Waikoloa, HI Institute of Electrical and Electronics Engineers Inc., 2018. 31-32.

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