Electrical characterization of n-doped SiGeSn diodes with high Sn content

Clausen CJ, Fischer IA, Weisshaupt D, Baerwolf F, Tillack B, Colston G, Myronov M, Oehme M, Schulze J (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Semiconductor Science and Technology Institute of Physics: Hybrid Open Access

Book Volume: 33

Article Number: 124017

Journal Issue: 12

DOI: 10.1088/1361-6641/aae3ab

Abstract

Diodes incorporating undoped and Sb-doped Si x Ge1-x-ySn y layers grown by molecular beam epitaxy with different alloy compositions and lattice-matched to Ge were fabricated and characterized experimentally. We discuss material as well as electrical device characterization and investigate different contact metallizations (Ni and Al). In particular, we investigate the formation of Ni(Si x Ge1-x-ySn y ) on the doped Sb-doped Si x Ge1-x-ySn y layers via annealing based on material characterization and measurements of specific contact resistivities. Our results can serve as a starting point for the investigation of Si x Ge1-x-ySn y layers with high Si and Sn content as cladding material in optoelectronic devices such as lasers and light emitting diodes.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

University of Warwick GB United Kingdom (GB) Universität Stuttgart DE Germany (DE)

How to cite

APA:

Clausen, C.J., Fischer, I.A., Weisshaupt, D., Baerwolf, F., Tillack, B., Colston, G.,... Schulze, J. (2018). Electrical characterization of n-doped SiGeSn diodes with high Sn content. Semiconductor Science and Technology, 33(12). https://doi.org/10.1088/1361-6641/aae3ab

MLA:

Clausen, Caterina J., et al. "Electrical characterization of n-doped SiGeSn diodes with high Sn content." Semiconductor Science and Technology 33.12 (2018).

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