Ultra-low energy LIF neuron using Si NIPIN diode for spiking neural networks

Das B, Schulze J, Ganguly U (2018)

Publication Type: Journal article

Publication year: 2018

Journal

IEEE Electron Device Letters Institute of Electrical and Electronics Engineers (IEEE)

Book Volume: 39

Pages Range: 1832-1835

Article Number: 8496854

Journal Issue: 12

DOI: 10.1109/LED.2018.2876684

Abstract

An energy efficient neuron is essential for spiking neural network (SNN) to operate at low energy to mimic the human brain functionalities in hardware. Several CMOS-based Si transistors, memory devices, spintronic devices have been used as a neuron for SNN. However, the main concern is the energy efficiency for these neurons. In this letter, we experimentally demonstrate a Si-based CMOS compatible asymmetric NIPIN diode as a LIF neuron. First, we demonstrate the LIF neuron characteristics by comparing the spike-frequency (f) versus voltage curve with that of a simple LIF neuron model. This neuron shows a classical ReLU behavior, which is attractive for typical software neuron models. Then, we show an ultra-low energy consumption of ∼2 × 10^-17J per spike at 10-nm node of this neuron, as NIPIN diode is highly scalable (4F²) due to its capacitorless structure. This is the lowest reported energy/spike for any LIF neuron for SNN application. Thus, the NIPIN is suitable for ultra-low energy LIF neuron application for energy efficient SNN.

Involved external institutions

Indian Institute of Technology Bombay

India (IN) Universität Stuttgart

Germany (DE)

How to cite

APA:

Das, B., Schulze, J., & Ganguly, U. (2018). Ultra-low energy LIF neuron using Si NIPIN diode for spiking neural networks. IEEE Electron Device Letters, 39(12), 1832-1835. https://dx.doi.org/10.1109/LED.2018.2876684

MLA:

Das, B., J. Schulze, and Udayan Ganguly. "Ultra-low energy LIF neuron using Si NIPIN diode for spiking neural networks." IEEE Electron Device Letters 39.12 (2018): 1832-1835.

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