Effect of delta-p doping and i-region length scaling on ion/ioff in si nipin diode for selector application
Das B, Schulze J, Ganguly U (2019)
Publication Type: Conference contribution
Publication year: 2019
Publisher: Springer Science and Business Media, LLC
Book Volume: 215
Pages Range: 671-674
Conference Proceedings Title: Springer Proceedings in Physics
Event location: New Delhi
ISBN: 9783319976037
DOI: 10.1007/978-3-319-97604-4_103
Abstract
Higher Ion/Ioff and a low off state leakage is desirable for a selector diode for memory applications. Punch through based triangular barrier bidirectional Si NIPIN selector possess high on-off current ratio (>1 X 104) with a low off state leakage current. An Ion/Ioff >1X 106 at 1 V with an Ioff of 76 nA at 0.5 V, for NIPIN, has been demonstrated here, by scaling the i-region length and delta-p doping by simulation results which are calibrated with experimental results.
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How to cite
APA:
Das, B., Schulze, J., & Ganguly, U. (2019). Effect of delta-p doping and i-region length scaling on ion/ioff in si nipin diode for selector application. In Springer Proceedings in Physics (pp. 671-674). New Delhi, IN: Springer Science and Business Media, LLC.
MLA:
Das, Bhaskar, J. Schulze, and Udayan Ganguly. "Effect of delta-p doping and i-region length scaling on ion/ioff in si nipin diode for selector application." Proceedings of the 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017, New Delhi Springer Science and Business Media, LLC, 2019. 671-674.
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