Electrical characterization of fabricated PIN diodes made from SixGe1-x-ysny with an embedded Ge1-xSnx quantum well

Povolni P, Schwarz D, Clausen CJ, Elogail Y, Funk HS, Oehme M, Weißhaupt D, Schulze J (2019)

Publication Type: Conference contribution

Publication year: 2019

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 1-6

Conference Proceedings Title: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings

Event location: Opatija HU

ISBN: 9789532330984

DOI: 10.23919/MIPRO.2019.8757211

Abstract

The interest in group-IV based optoelectronic devices has increased due to a foreseeable future demand. The main advantage is the relatively simple integration into the modern Silicon-based Complementary Metal-Oxide-Semiconductor technology platform. The ternary alloy Silicon-Germanium-Tin enables achieving a direct bandgap material made from the indirect semiconductors Silicon, Germanium and Tin. By using a virtual Germanium substrate technology these semiconductors can be integrated on a Silicon wafer. In this paper, we discuss the characterization of grown and fabricated pin-diodes made from the ternary alloy Silicon-Germanium-Tin by using Molecular Beam Epitaxy technology on a virtual Germanium substrate formed on Silicon(001) wafers. To achieve higher Tin concentrations to enable direct band transitions, a thin Germanium-Tin layer is inserted into the intrinsic region of the pin-diodes resulting in a quantum well. It is shown that these pin-diodes have electrically good characteristics and in particular a low dark current density, which suggest a high crystal-quality.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Povolni, P., Schwarz, D., Clausen, C.J., Elogail, Y., Funk, H.S., Oehme, M.,... Schulze, J. (2019). Electrical characterization of fabricated PIN diodes made from SixGe1-x-ysny with an embedded Ge1-xSnx quantum well. In Marko Koricic, Zeljko Butkovic, Karolj Skala, Zeljka Car, Marina Cicin-Sain, Snjezana Babic, Vlado Sruk, Dejan Skvorc, Slobodan Ribaric, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Edvard Tijan, Predrag Pale, Darko Huljenic, Tihana Galinac Grbac, Matej Janjic (Eds.), 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings (pp. 1-6). Opatija, HU: Institute of Electrical and Electronics Engineers Inc..

MLA:

Povolni, P., et al. "Electrical characterization of fabricated PIN diodes made from SixGe1-x-ysny with an embedded Ge1-xSnx quantum well." Proceedings of the 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019, Opatija Ed. Marko Koricic, Zeljko Butkovic, Karolj Skala, Zeljka Car, Marina Cicin-Sain, Snjezana Babic, Vlado Sruk, Dejan Skvorc, Slobodan Ribaric, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Edvard Tijan, Predrag Pale, Darko Huljenic, Tihana Galinac Grbac, Matej Janjic, Institute of Electrical and Electronics Engineers Inc., 2019. 1-6.

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