Dick JF, Elsayed A, Schwarz D, Schulze J (2019)
Publication Type: Conference contribution
Publication year: 2019
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 19-23
Conference Proceedings Title: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings
ISBN: 9789532330984
DOI: 10.23919/MIPRO.2019.8756927
Pure Boron on Silicon junctions are commonly deposited at temperatures ranging from Tsub = 400 °C to Tsub = 700 °C using Chemical Vapor Deposition. In this work, the low-temperature deposition of Boron on Silicon using Molecular Beam Epitaxy is investigated through electrical characterization, as well as an evaluation of the surface morphology. We also discuss how lower processing temperatures enable the employment of pure Boron deposition as a back end-of-line fabrication step where lower thermal budgets are required.
APA:
Dick, J.F., Elsayed, A., Schwarz, D., & Schulze, J. (2019). Electrical characterization of low-temperature boron on silicon deposition utilizing molecular beam epitaxy. In Marko Koricic, Zeljko Butkovic, Karolj Skala, Zeljka Car, Marina Cicin-Sain, Snjezana Babic, Vlado Sruk, Dejan Skvorc, Slobodan Ribaric, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Edvard Tijan, Predrag Pale, Darko Huljenic, Tihana Galinac Grbac, Matej Janjic (Eds.), 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings (pp. 19-23). Opatija, HU: Institute of Electrical and Electronics Engineers Inc..
MLA:
Dick, J. F., et al. "Electrical characterization of low-temperature boron on silicon deposition utilizing molecular beam epitaxy." Proceedings of the 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019, Opatija Ed. Marko Koricic, Zeljko Butkovic, Karolj Skala, Zeljka Car, Marina Cicin-Sain, Snjezana Babic, Vlado Sruk, Dejan Skvorc, Slobodan Ribaric, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Edvard Tijan, Predrag Pale, Darko Huljenic, Tihana Galinac Grbac, Matej Janjic, Institute of Electrical and Electronics Engineers Inc., 2019. 19-23.
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