Electrical Characterization of pure Boron-on-Germanium pin Diodes

Gebert L, Schwarz D, Elsayed A, Schulze J (2019)

Publication Type: Conference contribution

Publication year: 2019

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 13-18

Conference Proceedings Title: 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings

Event location: Opatija HU

ISBN: 9789532330984

DOI: 10.23919/MIPRO.2019.8757123

Abstract

Pure Boron on Germanium deposition was successfully performed using Molecular Beam Epitaxy to form ultra-shallow pin diodes. In order to form the pure Boron on Germanium heterojunction, a 100 nm thick highly Antimony doped Germanium layer was grown on a highly Arsenic doped Silicon(001) wafer by using Molecular Beam Epitaxy. Afterwards, a 5 min annealing step at 830 °C is performed to form a virtual, defect-less Germanium substrate. Growth is then continued with 300 nm of intrinsic Germanium layer. Finally, a few nanometers of Boron were deposited at a temperature of 400 °C. A maximum Boron deposition temperature of 400 °C allows the transfer of this technology to a Back End-of-Line process. A Complementary Metal-Oxide-Semiconductor-compatible fabrication process was utilized afterwards to fabricate single mesa diodes out of the grown layer stacks. The diodes show high ideality, low series resistance and low dark currents.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Gebert, L., Schwarz, D., Elsayed, A., & Schulze, J. (2019). Electrical Characterization of pure Boron-on-Germanium pin Diodes. In Marko Koricic, Zeljko Butkovic, Karolj Skala, Zeljka Car, Marina Cicin-Sain, Snjezana Babic, Vlado Sruk, Dejan Skvorc, Slobodan Ribaric, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Edvard Tijan, Predrag Pale, Darko Huljenic, Tihana Galinac Grbac, Matej Janjic (Eds.), 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings (pp. 13-18). Opatija, HU: Institute of Electrical and Electronics Engineers Inc..

MLA:

Gebert, L., et al. "Electrical Characterization of pure Boron-on-Germanium pin Diodes." Proceedings of the 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019, Opatija Ed. Marko Koricic, Zeljko Butkovic, Karolj Skala, Zeljka Car, Marina Cicin-Sain, Snjezana Babic, Vlado Sruk, Dejan Skvorc, Slobodan Ribaric, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Edvard Tijan, Predrag Pale, Darko Huljenic, Tihana Galinac Grbac, Matej Janjic, Institute of Electrical and Electronics Engineers Inc., 2019. 13-18.

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