Insulated Gate Bipolar Transistors based on Pure Boron Collectors
Elsayed A, Dick JF, Schulze J (2019)
Publication Type: Conference contribution
Publication year: 2019
Journal
Publisher: Institute of Electrical and Electronics Engineers Inc.
Book Volume: 2019-May
Pages Range: 343-346
Conference Proceedings Title: Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Event location: Shanghai
ISBN: 9781728105796
DOI: 10.1109/ISPSD.2019.8757595
Abstract
Continuous efforts are invested to improve mid- and high-voltage devices to improve on-state resistances, switching performance and overall power losses. However, given the current maturity of Silicon technologies, significant improvements are difficult to achieve. In this work, we attempt to improve on-state resistances of Insulated Gate Bipolar Transistors through utilizing ultra-thin pure Boron layers for collector junctions as well as introducing modified channel doping schemes. We also include DC characteristics, comparisons and analysis of the achieved results.
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Germany (DE)How to cite
APA:
Elsayed, A., Dick, J.F., & Schulze, J. (2019). Insulated Gate Bipolar Transistors based on Pure Boron Collectors. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp. 343-346). Shanghai, CN: Institute of Electrical and Electronics Engineers Inc..
MLA:
Elsayed, Ahmed, Jan Frederik Dick, and Jörg Schulze. "Insulated Gate Bipolar Transistors based on Pure Boron Collectors." Proceedings of the 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019, Shanghai Institute of Electrical and Electronics Engineers Inc., 2019. 343-346.
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