Das B, Lele A, Kumbhare P, Schulze J, Ganguly U (2019)
Publication Type: Journal article
Publication year: 2019
Book Volume: 40
Pages Range: 850-853
Article Number: 8703727
Journal Issue: 6
Spike time dependent plasticity (STDP) is a learning rule in biology,where the time-correlation of narrow pre- and post-synaptic spikes (tspike 5ms) is tracked across a wide learning window (LW) of time (tLW= 80ms) by neurotransmitter dynamics at the synapse such that tLW:tspike 20. In hardware, resistive random access memory (RRAM) (1M)-based synapse shows STDP by the superposition of long pre- and post-synaptic neural waveforms comparable to the timescale of the learning window. However, this artificially limits the spike rate and needs a complicated peripheral circuit to generate thewaveform,which has an area penalty. In this letter, we propose a PrxCa1-xMnO3 (PCMO)-based RRAM (1M) with an impact-ionization (II)- based silicon (Si) NIPIN (n-iv- p-i-n) selector (1S) diode as a synapse to operate with only short spikes. The NIPIN device transient response is utilized as a clock at the synapse to compute a pre- and post-spike time correlation, such that the 1M1S synapse requires short pulses instead of long waveforms. We experimentally demonstrate that very short (tspike 80 ns) square pulses are required to generate STDP while the learning window is tLW 1.5 us, which enables tLW:tspike 19. Furthermore, a hardware acceleration of 1000 over biology is shown. The square pulse scheme avoids complex waveforms and related complicated circuits. Thus, the synaptic time-keeping is demonstrated that enables biologically realistic SNN for future brain inspired computing.
APA:
Das, B., Lele, A., Kumbhare, P., Schulze, J., & Ganguly, U. (2019). PrxCa1-xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse. IEEE Electron Device Letters, 40(6), 850-853. https://doi.org/10.1109/LED.2019.2914406
MLA:
Das, Bhaskar, et al. "PrxCa1-xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse." IEEE Electron Device Letters 40.6 (2019): 850-853.
BibTeX: Download