Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C
Knežević T, Suligoj T, Liu X, Nanver LK, Elsayed A, Dick JF, Schulze J (2019)
Publication Type: Conference contribution
Publication year: 2019
Publisher: Editions Frontieres
Book Volume: 2019-September
Pages Range: 242-245
Conference Proceedings Title: European Solid-State Device Research Conference
Event location: Cracow
ISBN: 9781728115399
DOI: 10.1109/ESSDERC.2019.8901810
Abstract
Pure boron deposited on silicon for the formation of p+n-like junctions was studied for deposition temperatures down to 50 °C. The commonly used chemical-vapor deposition method was compared to molecular beam epitaxy with respect to the electrical characteristics and the boron-layer compactness as evaluated by etch tests, ellipsometry and atomic force microscopy. Electrically, the important parameters are minority carrier electron injection into the p-Type region and the sheet resistance along the boron-To-silicon interface which appear to be independent of deposition method for temperatures down to 300 °C. Only with molecular beam epitaxy did we succeed in producing substantial layers for the lower temperatures down to 50 °C. Also, at this very low temperature, p+n-like diodes were formed, but the suppression of electron injection was less efficient than at the higher temperatures. From simulations, assuming that the attractive electrical behavior is due to a monolayer of fixed negative charge at the interface, the concentration of holes needed to explain the I-V characteristics is estimated to be 1.4×1011 cm-2 for 50 °C deposition and 1.1×1013 cm-2 for 400 °C.
Authors with CRIS profile
Involved external institutions
University of Twente
Netherlands (NL)
University of Zagreb / Sveučilište u Zagrebu
Croatia (HR)
Universität Stuttgart
Germany (DE)
Netherlands (NL)
University of Zagreb / Sveučilište u Zagrebu
Croatia (HR)
Universität Stuttgart
Germany (DE)
How to cite
APA:
Knežević, T., Suligoj, T., Liu, X., Nanver, L.K., Elsayed, A., Dick, J.F., & Schulze, J. (2019). Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C. In European Solid-State Device Research Conference (pp. 242-245). Cracow, PL: Editions Frontieres.
MLA:
Knežević, Tihomir, et al. "Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C." Proceedings of the 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow Editions Frontieres, 2019. 242-245.
BibTeX: Download