A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector

Kollner AC, Yu Z, Oehme M, Anders J, Kaschel M, Schulze J, Burghartz JN (2019)

Publication Type: Conference contribution

Publication year: 2019

Publisher: Institute of Electrical and Electronics Engineers Inc.

Book Volume: 2019-October

Conference Proceedings Title: Proceedings of IEEE Sensors

Event location: Montreal, QC CA

ISBN: 9781728116341

DOI: 10.1109/SENSORS43011.2019.8956731

Abstract

This paper proposes a new concept of a Near-Infrared (NIR) micro-system camera with a backside illuminated Germanium-on-Silicon (Ge-on-Si) photodetector. The performance of this photodetector is analyzed and compared to frontside illuminated Ge-on-Si photodetectors. An enhanced responsivity of 0.4 A/W at 1310 nm for the backside illuminated diode is achieved, which is equal to commercial solutions. With the help of zero-biasing, the critical dark current density can be reduced by more than a factor of 80 000 compared to standard biasing with -1 V. By using a backside illuminated diode, reflections of the metal layer are eliminated and the pixel fill factor is increased. Additionally, a proof of concept micro-system with a 2 x 2 pixel array of Ge-on-Si backside illuminated photodetectors and a custom readout ASIC is demonstrated. This proves the functionality of the proposed photodetector and readout concept for NIR camera applications.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart DE Germany (DE) Institut für Mikroelektronik Stuttgart (IMS CHIPS) DE Germany (DE)

How to cite

APA:

Kollner, A.C., Yu, Z., Oehme, M., Anders, J., Kaschel, M., Schulze, J., & Burghartz, J.N. (2019). A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector. In Proceedings of IEEE Sensors. Montreal, QC, CA: Institute of Electrical and Electronics Engineers Inc..

MLA:

Kollner, Ann Christin, et al. "A 2x2 Pixel Array Camera based on a Backside Illuminated Ge-on-Si Photodetector." Proceedings of the 18th IEEE Sensors, SENSORS 2019, Montreal, QC Institute of Electrical and Electronics Engineers Inc., 2019.

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